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力晶科技 ~公告本公司取得日本專利局核發JP 5586666專利

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1.專利、商標、著作或其他智慧財產權之內容:NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ANDREADING-OUT METHOD THEREFORE
2.專利、商標、著作或其他智慧財產權之取得日期:103/08/18
3.取得專利、商標、著作或其他智慧財產權之成本:NT$279,099
4.其他應敘明事項:In a non-volatile semiconductor memory device outputting a data valuedetermined according to a majority rule by reading-out data from eachmemory cell for an odd number of times, an odd number of latch circuits,each of which comprises a capacitor for selectively holding a voltage ofeach of the data read-out from the memory cell for the odd number of timesin sequence, is provided. The capacitor of each latch circuit is connectedin parallel after the capacitor of each latch circuit selectively holds thevoltage of each of the data read-out from the memory cell for the odd numberof times in sequence, and the data value is determined by the majority rulebased on a composite voltage of the capacitor of each latch circuitconnected in parallel.
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 力晶科技, 日本專利, JP 5586666專利

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#力晶科技#日本專利#JP 5586666專利
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